View BLM7G22S-60PB_8305867.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product profile 1.1 general description the BLM7G22S-60PB(g) is a dual path, 2-stag e power mmic using nxp?s state of the art gen7 ldmos technology. this de vice is perfectly suited as general purpose driver in the frequency range from 2100 mhz to 2200 mhz. available in gull wing or flat lead outline. 1.2 features and benefits ? integrated temperature compensated bias ? biasing of individual stages is externally accessible ? integrated current sense ? integrated esd protection ? excellent thermal stability ? high power gain ? on-chip matching for ease of use (input matched to 50 ? ; output partially matched) ? designed for broadband operation (frequency 2100 mhz to 2200 mhz) ? compliant to directive 2002/ 95/ec, regarding restricti on of hazardous substances (rohs) 1.3 applications rf power mmic for w-cdma base stations in the 2100 mhz to 2200 mhz frequency range. BLM7G22S-60PB; BLM7G22S-60PBg ldmos 2-stage power mmic rev. 1 ? 11 december 2012 product data sheet table 1. application performance typical rf performance at t case = 25 ? c; i dq1 = 75 ma; i dq2 = 233 ma. test signal: 3gpp test model 1; 64 dpch; clipping at 46 %; par = 8.4 db at 0.01% probability on ccdf per carrier; carrier spacing = 5 mhz; per sect ion unless otherwise s pecified in a class-ab production circuit. test signal f v ds p l(av) g p ? d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2140 28 1.6 31.5 11.3 ? 43
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 2 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 2. pinning information 2.1 pinning 2.2 pin description transparent top view the exposed backside of the package is the ground terminal of the device. fig 1. pin configuration

! " # $ # $ % " ! table 2. pin description symbol pin description v ds(a1) 1 drain-source voltage of stage a1 v gss(a2) 2 gate sense fet and gate source voltage of stage a2 v dss(a2) 3 drain sense fet source voltage of stage a2 rf_in_a 4 rf input path a v gss(a1) 5 gate sense fet and gate source voltage of stage a1 v dss(a1) 6 drain sense fet source voltage of stage a1 n.c. 7 not connected n.c. 8 not connected v dss(b1) 9 drain sense fet source voltage of stage b1 v gss(b1) 10 gate sense fet and gate source voltage of stage b1 rf_in_b 11 rf input path of b v dss(b2) 12 drain sense fet source voltage of stage b2 v gss(b2) 13 gate sense fet and gate source voltage of stage b2 v ds(b1) 14 drain-source voltage of stage b1
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 3 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic [1] flange = rf_ground. 3. ordering information 4. block diagram 5. limiting values [1] continuous use at maximum temperature will affect the mttf. rf_out_a/v ds(a2) 15 rf output path a / drain source voltage of stage a2 rf_out_b/v ds(b2) 16 rf output path b / drain source voltage of stage b2 gnd [1] flange rf ground table 2. pin description ?continued symbol pin description table 3. ordering information type number package name description version BLM7G22S-60PB hsop16f plastic, heatsink smal l outline package; 16 leads(flat) sot1211-1 BLM7G22S-60PBg hsop16 plastic, heatsink small outline package; 16 leads sot1212-1 fig 2. block diagram of blm7g22-60pbg

&'(&& )'(&&

&'(&& )'(&& table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v v gs(sense) sense gate-source voltage ? 0.5 +9 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] -225 ?c t case case temperature - 150 ?c
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 4 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 6. thermal characteristics [1] when operated with a cw signal. 7. characteristics table 5. thermal characteristics measured for total device. symbol parameter conditions value unit r th(j-c) thermal resistance from junction to case final stage; t case =90 ? c; p l =3.2w [1] 1.1 k/w driver stage; t case =90 ? c; p l =3.2w [1] 3.2 k/w table 6. dc characteristics t case = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit final stage v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.422 ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 42 ma 1.4 1.9 2.4 v v gsq gate-source quiescent voltage v ds =28 v; i d = 253 ma 1.7 2.1 2.5 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10 v - 7.8 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 1478 ma - 2.85 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 1.48 a - 350 - m ? i dq quiescent drain current main transistor: v ds =28v sense transistor: i d =7ma; v ds =28v 208 233 257 ma driver stage v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.116 ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 11.6 ma 1.4 1.9 2.4 v v gsq gate-source quiescent voltage v ds =28 v; i d = 69.6 ma 1.7 2.1 2.5 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10 v - 2.2 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d =406 ma -0.8-s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 0.4 a - 2350 - m ? i dq quiescent drain current main transistor: v ds =28v sense transistor: i d =7ma; v ds =28v 67 75 83 ma
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 5 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 8. application information [1] american technical ce ramics type 100b or capacitor of same quality. [2] american technical ce ramics type 100a or capacitor of same quality. table 7. rf characteristics typical rf performance at t case = 25 ? c; v ds = 28 v; i dq1 = 75 ma; i dq2 = 233 ma. test signal: 2-carrier w-cdma; 3gpp test model 1; 64 dpch; clipping at 46 %; par = 8.4 db at 0.01% probability on ccdf per carrier; carrier spacing = 5 mhz; f = 2140 mhz; per section unless otherwise specifie d, measured in a class-ab production circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 1.6 w 29.5 31.5 33.5 db ? d drain efficiency p l(av) = 1.6 w 10 11.3 - % rl in input return loss p l(av) = 1.6 w - ? 17 ? 10 db acpr adjacent channel power ratio p l(av) = 1.6 w - ? 43 ? 40 dbc table 8. list of components for test circuit see figure 3 . component description value remarks c1, c4, c21, c24, c100, c200, c300, c400 capacitor 10 ? f c2, c5, c6, c22, c25, c26 capacitor 1 ? f c3, c7, c10, c23, c27, c30 capacitor 8.2 pf [1] c8, c28 capacitor 1.6 pf [1] c9, c29 capacitor 0.4 pf [1] c11, c31 electrolytic capacitor 470 ? f c101, c201, c301, c401 capacitor 100 nf c102, c103, c105, c202, c203, c205, c302, c303, c305, c402, c403, c405 capacitor 12 pf [2] c104, c204, c304, c404 capacitor 4.7 ? f d100, d200, d300, d400 ic: lm4051 - p100, p400 potentiometer - do not populate q100, q200, q300, q400 ic - lm7341 r1, r21 ferrite bead - r100, r200, r300, r400 resistor 4.7 ? r101, r108, r208, r308, r401, r408 resistor 0 ? r102, r402 resistor 360 ? 1% tolerance r103, r403 resistor 330 ? 1% tolerance r104, r203, r303, r404 resistor 68 k ? r105, r405 resistor 10 k ? r106, r205, r305, r406 resistor 820 ? r107, r206, r306, r407 resistor 47 ? r109, r209, r309, r409 resistor 300 k ? r201, r301 resistor 180 ? 1% tolerance r202, r302 resistor 3.6 k ? 1% tolerance r204, r304 resistor 9.1 k ? r207, r307 resistor 1 k ?
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 6 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic printed-circuit board (pcb): rogers 4350; thickness = 0.762 mm. see table 8 for a list of components. fig 3. component layout for class-ab application circui t with auto-bias ! " #
*+, *+, *+, *+, %% (%% % %$ %! )%# % )%" %# %" % -%% % %% )% % )% )%%

) ) )$ $% % )%" )%$ )%$ % %! )%# %" %# % %$ -%% %% % % % %% )% )% )%% $%! )$%" )$%$ #% )$%# $% $%# $%" $%% $% $% $% $%$ )$%% $%% )$% )$% ,.

)#%" )#%$ #% %" #%! #%# #% )#%# #%% -#%% )#% #% #% #%% )#% )#%% #% #%$ (#%% ) ) )" ) ) )% )$ )$% ) )# ) /'
.!%(
%. %'01 #$"%$%23

,. )# )! ) ) ) )! )" )$ -$%% %% (%% % %$ %! )%# % )%" %# %" % -%% % %% )% % )% )%%

) ) )$ $% % )%" )%$ )%$ % %! )%# %" %# % %$ -%% %% % % % %% )% )% )%% $%! )$%" )$%$ #% )$%# $% $%# $%" $%% $% $% $% $%$ )$%% $%% )$% )$% ,.

)#%" )#%$ #% %" #%! #%# #% )#%# #%% -#%% )#% #% #% #%% )#% )#%% #% #%$ (#%% ) ) )" ) ) )% )$ )$% ) )# ) /'
.!%(
%. %'01 #$"%$%23

,. )# )! ) ) ) )! )" )$ -$%%
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 7 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 8.1 performance curves performance curves are measured per section in a class-ab BLM7G22S-60PBg application circuit with auto-bias. 8.1.1 w-cdma t case = 25 ? c; v ds = 28 v; p l(av) = 1.6 w; i dq1 = 75 ma; i dq2 = 232 ma; carrier spacing = 5 mhz. t case = 25 ? c; v ds = 28 v; p l(av) = 1.6 w; i dq1 = 75 ma; i dq2 = 232 ma; carrier spacing = 5 mhz. fig 4. power gain and drain efficiency as function of frequency; typical values fig 5. adjacent channel power ratio as a function of frequency; typical values t case = 25 ? c; v ds = 28 v; f = 2140 mhz; i dq1 = 75 ma; i dq2 = 232 ma; carrier spacing = 5 mhz. t case = 25 ? c; v ds = 28 v; f = 2140 mhz; i dq1 = 75 ma; i dq2 = 232 ma; carrier spacing = 5 mhz. fig 6. power gain as a function of output power; typical values fig 7. adjacent channel power ratio as a function of output power; typical values %"% %% "% %% "% " " $ $$ $ $" " 4'01
5 6
5
%"% %% "% %% "% ."% .# .#! .## .# .#% 4'01 )( % # ! % # ! % % $% % $ $% $# #% ( / 7
5 6
5 % # ! % # ."% .#% .$% .% .% % ( / 7 )(
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 8 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 8.1.2 1-tone pulsed cw v ds = 28 v; f = 2140 mhz; i dq1 = 75 ma; i dq2 = 232 ma; carrier spacing = 5 mhz. (1) t case = ? 30 ? c (2) t case = +25 ? c (3) t case = +100 ? c fig 8. quiescent drain current as a function of case temperature; typical values fig 9. power gain and drain efficiency as function of output power; typical values .#% .% % % #% !% % %% % % "% %% "% %% "% +, 8) 9 9 9 2 2 2 9 9 9 9 9 9 % # ! % " % ! $ # $$ $ $" #% ( / 7

5 5 6 6 6 $ $ $ $ $ $

5 5 t case = 25 ? c; v ds =28 v; p l(av) = 1.6 w; f = 2140 mhz; i dq1 = 75 ma; i dq2 = 232 ma; ? =10%; t p =100 ? s. (1) v dd = 24 v (2) v dd = 28 v (3) v dd = 32 v v ds = 28 v; p l(av) = 1.6 w; f = 2140 mhz; i dq1 = 75 ma; i dq2 = 232 ma; ? =10%; t p = 100 ? s. (1) t case = ? 30 ? c (2) t case = +25 ? c (3) t case = +100 ? c fig 10. power gain as a function of output power; typical values fig 11. power gain as a function of output power; typical values % " % " % " $% $" #% $% $ $ ( / 7

$ $ $
% " % " % " $% $" #% " $ $$ $" ( / 7

$ $ $
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 9 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 8.1.3 2-tone cw 8.2 application without auto-bias t case = 25 ? c; v ds = 28 v; f c = 2140 mhz; i dq1 = 75 ma; i dq2 = 232 ma; tone spacing = 100 khz. fig 12. intermodulation distortion as a function of peak envelope power load power; typical values % . % % ." .!" .#" ." ." ( /(&( 7 ' ' ' '$ '$ '$ '" '" '" ' ' ' connect pins 2 and 3; connect pins 5 and 6; c onnect pins 9 and 10; connect pins 12 and 13 at board level. the exposed backside of the package is the ground terminal of the device. fig 13. non auto-bias application

! " # $ # $ % " !
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 10 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 9. test information 9.1 ruggedness the BLM7G22S-60PB and BLM7G22S-60PBg are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq1 =75ma; i dq2 = 233 ma; p l = 27 w (w-cdma); f = 2140 mhz. 9.2 impedance information [1] z s and z l defined in figure 14 . table 9. typical impedance measured load-pull data. typical values per section unless otherwise specified. f z s [1] z l [1] mhz ? ? BLM7G22S-60PB 2050 58.86 + j21.82 10.54 ? j3.20 2110 58.70 + j29.76 10.23 ? j2.72 2140 51.80 + j41.56 9.56 ? j2.90 2170 47.31 + j44.60 9.10 ? j2.80 2230 38.35 + j46.53 8.41 ? j2.05 BLM7G22S-60PBg 2080 55.62 + j18.89 15.89 ? j2.28 2110 55.61 + j19.04 14.74 ? j2.59 2140 55.60 + j19.12 13.56 ? j2.75 2170 55.57 + j19.25 12.38 ? j2.75 2200 55.53 + j19.39 11.20 ? j2.61 2230 55.48 + j19.55 10.05 ? j2.34 fig 14. definition of transistor impedance 001aaf059 drain z l z s gate
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 11 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 9.3 performance curves performance curves are measured per section. t case = 25 ? c; v ds = 28 v; p l(av) = 1.6 w; f = 2140 mhz; i dq1 = 75 ma; i dq2 = 232 ma; ? =10%; t p =100 ? s. fig 15. one-tone pulsed cw drain efficiency at 1 db gain compression as function of output power at 1 db gain compression; typical values #% # ## #! # "% % # $! # !% ( / 2 5 5 6 6 6
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 12 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 10. package outline fig 16. package outline sot1211-1 (hsop16f) 4:, ;<3 =:,> &;:>+ :>?<> ,,;+< &) @&&) @& . ,><. > .%. .%$.%! < 22 2+ >2 2 $ % % % """ ""% "#" % % % %! %" %" %% " % % ! " " >< (3+,<>:2<+3:><:;,>,>4%"222+2;2:,+:><3; 0(! a3+,<bc+<,d,2+33>;<3+d+ef!3+,43+< . $!" $!% $"" * %#% %$" %$% * !%" !%% "" %%"%" g %% ! & $ % & " "# " & !! "! " ! 0 & #" " - =h ,+3 <+3i % % 2 2 g h & & ! # " * h *# - & 0 & = i 2,>,22+::e+32,>,
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 13 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic fig 17. package outline sot1212-1 (hsop16) 4:, ;<3 =:,> &;:>+ :>?<> ,,;+< &) @&&) @& .

.%".# .%". < 22 2+ >2 2 $ % %#% % %! %% ! $ % 2,>,22+::e+32,>, >< (3+,<>:2<+3:><:;,>,>4%"222+2;2:,+:><3;

$ # * $!" * !%% & & & "# " #" %% !%" " 0 & $" / % %$" % %" " %" $!% %$" $ %" -= % "" " % %$% """ ""% "#" % %" % $"" %%! % .%% % %% % % h %%" g % %22 ,+3 <+3i & 0 & & # ! " & g = i h * # h * $ - # 8 $ 8 % 8 j j /
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 14 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 11. handling information 12. abbreviations 13. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous waveform dpch dedicated physical channel esd electrostatic discharge fet field-effect transistor gen7 seventh generation ldmos laterally diffused metal oxide semiconductor mmic monolithic microwave integrated circuit mttf mean time to failure par peak-to-average ratio vswr voltage standing wave ratio w-cdma wideband code division multiple access table 11. revision history document id release date data sheet status change notice supersedes BLM7G22S-60PB_7g22s-60pbg v.1 20121211 product data sheet - -
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 15 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 14.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 14.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLM7G22S-60PB_7g22s-60pbg all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 11 december 2012 16 of 17 nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 14.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLM7G22S-60PB(g) ldmos 2-stage power mmic ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 11 december 2012 document identifier: BLM7G22S-60PB_7g22s-60pbg please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 16. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 2.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 application information. . . . . . . . . . . . . . . . . . . 5 8.1 performance curves . . . . . . . . . . . . . . . . . . . . . 7 8.1.1 w-cdma. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8.1.2 1-tone pulsed cw . . . . . . . . . . . . . . . . . . . . . . 8 8.1.3 2-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.2 application without auto-bias . . . . . . . . . . . . . . 9 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9.1 ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9.2 impedance information . . . . . . . . . . . . . . . . . . 10 9.3 performance curves . . . . . . . . . . . . . . . . . . . . 11 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 11 handling information. . . . . . . . . . . . . . . . . . . . 14 12 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 14.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 15 contact information. . . . . . . . . . . . . . . . . . . . . 16 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

▲Up To Search▲

Price & Availability of BLM7G22S-60PB

	To Download BLM7G22S-60PB Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .